As early as 2020, Tongguang Technology initiated the "Industrialization Project of High Quality Silicon Carbide Single Crystal Substrate and Epitaxial Wafer". However, due to the lack of production capacity for epitaxial wafers and the fact that the original product performance did not meet market demand, some parts of the project were ultimately not continued to be constructed.

Therefore, the company has adjusted its development direction and focused on the main business of silicon carbide single crystal substrates. In 2024, the project's environmental impact assessment report was approved, and the environmental impact assessment was approved in January 2025, with trial operation achieved in March. This completion of environmental protection acceptance marks the official conclusion of the project.

Finally, local projects are making efforts, and the silicon carbide track continues to heat up

From national policy support to downstream demand for new energy and smart grids, silicon carbide is standing at the forefront of the third-generation semiconductor industry. The official landing of the 70000 substrate production project in Tongguang, Hebei not only injects new momentum into the local semiconductor industry, but also provides strong support for the improvement of the national silicon carbide industry chain.

In the future, we also look forward to more domestic manufacturers continuously breaking through in the field of core materials and jointly promoting the independent and controllable development of Chinese semiconductor materials!