1. Zhejiang Jingrui: Successfully developed 12 inch conductive SiC crystal

Zhejiang Jingrui SuperSiC announced the successful growth of a 12 inch conductive silicon carbide (SiC) single crystal, with the first crystal having a diameter of 309mm and excellent quality. This breakthrough is based on the continuous iterative optimization of independently developed SiC single crystal growth furnaces and 8-12 inch long crystal processes.

Key technological breakthroughs:

Uneven temperature field and crystal cracking problems: Zhejiang Jingrui has successfully solved the core challenges in the growth of 12 inch SiC crystals, especially in terms of uneven temperature field and crystal cracking, through innovative crystal growth temperature field design and gas-phase raw material distribution process.

Technological autonomy and controllability: This breakthrough has made the 6-12 inch full-size crystal technology completely autonomous and controllable, not only improving production efficiency but also significantly reducing chip costs. This provides a solid technical foundation for the large-scale application and industrial chain improvement of domestically produced SiC materials.

2. Nansha Wafer: Release of 12 inch conductive SiC substrate

Nansha Wafer showcased its significant breakthrough in the field of 12 inch conductive SiC substrates at the industry conference on May 8, 2025. Since its establishment, Nansha Wafer has been committed to the research and production of silicon carbide single crystal materials, and has established production bases in Guangzhou, Zhongshan, Jinan and other places, forming a complete production line for SiC single crystal growth and substrate preparation.

Technological progress:

Low defect density: In the production process of 8-inch SiC substrate, Nansha wafer successfully achieved near zero screw dislocation and low basal plane dislocation density, significantly improving the reliability and performance of the product, laying the foundation for the industrialization of domestic 8-inch conductive substrates.

Market layout: The company has successfully supplied 8-inch SiC substrates in multiple domestic and international projects, and continues to move towards the research and mass production of 12 inch SiC substrates, providing solid material support for future efficient SiC applications.

3. Shandong Liguan Microelectronics Equipment: Accelerating the development of 12 inch liquid-phase SiC crystal growth equipment

Shandong Liguan has made breakthrough progress in the field of 12 inch SiC crystal growth furnace, especially in PVT resistance heating crystal growth furnace. The company has successfully developed and delivered the first two devices, marking its leading position in 12 inch SiC crystal technology.

Key technological breakthroughs:

PVT resistance heating long crystal furnace: Shandong Liguan's long crystal furnace equipment adopts innovative thermal field design, significantly improving temperature uniformity and stability (>30%), improving crystal yield and consistency, and has reached the international mainstream level.

12 inch liquid-phase SiC crystal growth equipment: The company is accelerating the research and development of 12 inch liquid-phase SiC crystal growth equipment and plans to achieve mass supply of the equipment by 2025. This breakthrough will not only promote the layout of domestic SiC materials in the global market, but also provide strong support for Chinese manufacturers to enter the first tier of the global SiC market.

Summary: Three companies work together to promote breakthroughs in domestic SiC materials

Through the joint efforts of Shandong Liguan, Zhejiang Jingrui, and Nansha Wafers, the progress of 12 inch SiC technology has taken a key step towards China's independent and controllable semiconductor industry. The joint efforts of equipment, materials, and technology have not only broken the monopoly of foreign giants, but also paved the way for the application of silicon carbide in more fields. Looking ahead to the future, with continuous technological breakthroughs and market expansion, China's position in the global SiC material market will become increasingly important.