Large scale semiconductor silicon carbide (SiC) materials mainly refer to silicon carbide single crystal substrates with a diameter of 6 inches or even larger. By utilizing them, high-quality epitaxial thin films can be obtained, which can then be used to manufacture high-performance power chips. Under the guidance of the "dual carbon" goal, the large-scale application of semiconductor silicon carbide materials and chips is coming. As a group four compound semiconductor material, silicon carbide has excellent characteristics such as wide bandgap, high thermal conductivity, high breakdown field strength, high electron saturation drift rate, good chemical and thermal stability. As an emerging power semiconductor material, power devices made of silicon carbide have higher operating temperatures, higher breakdown voltages, faster switching speeds, lower on resistance, and better durability compared to silicon power devices. It is expected to be widely applied in the field of power electronics, especially in the field of new energy related power electronics. The main technological innovation direction for large-sized semiconductor silicon carbide materials is to increase the size and thickness of silicon carbide single crystals, reduce the defect density of silicon carbide single crystals, in order to obtain lower cost and higher quality silicon carbide substrates. The size of silicon carbide single crystals is constantly increasing, leading to the current mainstream silicon carbide substrate size of 6 inches. Global research institutions and companies are competing to develop 8-inch silicon carbide single crystal and substrate technology, actively promoting its industrialization. At present, the thickness of silicon carbide single crystals is generally between 10-30mm, and there is still a long way to go to reach the meter level of silicon single crystals. The bulk defects such as microtubes in silicon carbide single crystals have been basically eliminated, but there are still many other defects such as line defects and dislocations, generally on the order of 10 ^ 3/cm ^ 2, which need to be further reduced. The power diode technology of silicon carbide is relatively mature, but the performance of its power metal oxide semiconductor field-effect transistor (MOSFET) needs to be significantly improved. Firstly, the ion activation rate in the MOSFET implantation region urgently needs to be improved, which is closely related to the ion implantation and subsequent high-temperature annealing during the device fabrication process. Secondly, how to optimize the key technical parameters of thermal oxidation and subsequent annealing processes to reduce the density of interface defects and oxide layer defects is an important issue to consider in improving MOSFET channel electron mobility and gate oxygen reliability. Finally, the reliability of MOSFETs must be significantly improved, which involves gate oxide and post annealing improvement techniques, short-circuit robustness improvement techniques, surge and avalanche resistance techniques, irradiation reinforcement techniques, etc.