Recently, two Chinese companies have made significant progress in the field of 12 inch SiC technology:

Jingyue Semiconductor: Developed high-quality 12 inch SiC ingots;

Tiancheng Semiconductor: Successfully developed 12 inch N-type silicon carbide single crystal material.

Jingyue Semiconductor:

Developed high-quality 12 inch SiC ingots

Following the successful mass production of 8-inch silicon carbide substrates in the first half of 2025, Jingyue Semiconductor has continued to invest and increase its research and development efforts. The company has continuously adjusted and optimized its processes in thermal field design, seed crystal bonding, thickness improvement, and defect control. On July 21st, it developed high-quality 12 inch SiC ingots, marking Jingyue's successful entry into the 12 inch SiC substrate lineup.

Behind this technological breakthrough is the continuous research and development of multiple key links by the Jingyue team. Faced with the challenges of uneven thermal field distribution, difficult alignment of seed crystals, insufficient thickness control accuracy, and increased risk of crystal defects during the growth process of large-sized crystals, the company systematically optimized the thermal field structure design, seed crystal bonding process parameters, and thickness uniformity control methods, and achieved significant results in defect suppression. Through the collaborative optimization of these core processes, Jingyue successfully achieved high-quality growth of 12 inch SiC crystals.

Tiancheng Semiconductor:

Successfully developed 12 inch N-type silicon carbide single crystal material

In the second quarter of 2025, Shanxi Tiancheng Semiconductor Materials Co., Ltd. successfully developed a 12 inch (300mm) N-type silicon carbide single crystal material.

Tiancheng Semiconductor has always focused on the research and production of silicon carbide materials, and has successively overcome the large-scale expansion process and the growth process of low defect N-type single crystal materials. The successful development of 12 inch N-type silicon carbide single crystal material is an important milestone in the development history of Tiancheng Semiconductor, and also the starting point for the company to embark on a new journey.

Next, Tiancheng Semiconductor will spare no effort to promote the industrialization technology of large-sized silicon carbide single crystal materials, deepen research and development investment, and maintain a leading position in technology.