1. Production capacity of Beijing Tianke Heda Semiconductor Co., Ltd.: By 2024, the annual production capacity of silicon carbide substrates will be about 300000 pieces, mainly 6 inches, with small-scale production of 8 inches; By 2025, the planned substrate production capacity will reach 500000 to 800000 pieces, and the epitaxial wafer production capacity will be 250000 pieces. Base: Beijing, Xuzhou, Shenzhen (joint venture) 2 Shandong Tianyue Advanced Technology Co., Ltd. (A-share) has a production capacity of approximately 460000 pieces per year for 8-inch substrates by 2024, with a target total production capacity of 600000 pieces per year by 2025, and will promote trial production of 12 inch substrates. Base: Shanghai Lingang (planned 960000 pieces/year), Jinan, Jining 3 Sanan Optoelectronics Co., Ltd. (A-share) has a production capacity of 192000 pieces per year for 6-inch substrates and 12000 pieces per year for 8-inch substrates and epitaxial wafers at its Changsha base; The Chongqing joint venture base is building a production capacity of 480000 8-inch substrates, epitaxial wafers, and chips. Base: Changsha, Chongqing (joint venture with STMicroelectronics) 4 Zhejiang Jingyue Semiconductor's production capacity: By 2024, the 6-inch substrate production capacity will be 60000 pieces/year, with a yield rate of 60%. The 8-inch substrate will be produced in small batches and samples will be sent. The planned substrate production capacity is 240000 pieces/year and epitaxial wafer production capacity is 50000 pieces/year by 2026. Base: Shaoxing Shengzhou 5 Shanxi Shuoke Crystal Co., Ltd. has a production capacity of 75000 pieces per year for silicon carbide substrates in the first phase. The second phase will be put into operation in early 2025, with an additional 200000 pieces per year for 6-8 inch N-type silicon carbide single crystal substrates and 25000 pieces per year for high-purity substrates. The 12 inch technology has been breakthrough. Base: Taiyuan 6 Hebei Tongguang Semiconductor Co., Ltd. has a production capacity of 100000 silicon carbide substrates per year; The Baoding base is under construction with an annual production capacity of 200000 8-inch pieces and is expected to be put into operation in 2027. Base: Baoding 7 Zhejiang Jingsheng Electromechanical Co., Ltd. (A-share) production capacity: The production capacity of silicon carbide substrates is expected to be 60000 pieces per month and 3000 pieces per month for 8-inch substrates by the end of 2024; Plan to increase the production capacity of 8-inch substrates by 60000 pieces per year by 2025, with a total production capacity of 300000 pieces per year for 6-8 inch substrates. 12 inch conductive substrate samples have been released. Base: Yinchuan, Shaoxing 8 Shanxi Tiancheng Semiconductor Materials Co., Ltd. has a planned production capacity of 50000 pieces per year for the first phase, covering 6-inch and 8-inch conductive products; The second phase is under construction. Self developed 12 inch long crystal furnace equipment. Base: Taiyuan 9 Zhejiang Tony Electronics Co., Ltd. (A-share) has a production capacity of 120000 6-inch silicon carbide substrates per year, but the yield rate has not met the standard. 8-inch small batch verification. Base: Huzhou 10 Guangzhou Nansha Wafer Semiconductor Technology Co., Ltd. has a production capacity of 200000 wafers per year for 6-inch substrates and epitaxial wafers (mainly substrates, Nansha base), 50000 wafers per year for 8-inch substrates (Jinan), and plans to produce 500000 wafers per year for 8-inch substrates by 2025. Base: Guangzhou, Zhongshan, Jinan 11 Shandong Yuehai Jin Semiconductor Technology Co., Ltd. has a production capacity of 50000 6-inch conductive silicon carbide substrates per year, and plans to reach 110000 wafers per year by 2025. Base: Dongying, Shandong 12 Luoxiao Semiconductor Materials Co., Ltd. (A-share) production capacity: The first phase of the Hefei base has built a production capacity of 240000 6-inch conductive silicon carbide substrates per year, with small batch verification of 8-inch substrates. The first phase of the base includes a 6-inch epitaxial wafer pilot line. Base: Hefei 13 Harbin Keyou Semiconductor Industry Equipment and Technology Research Institute Co., Ltd. has a production capacity of 50000 pieces per year for 6-inch substrates and 5000 pieces per year for 8-inch substrates; After the completion of the second phase of the plan, the total production capacity of 6-inch substrates will be 100000 pieces per year, and the total production capacity of 8-inch substrates will be tens of thousands of pieces per year. Base: Harbin 14 Anhui Microchip Changjiang Semiconductor Materials Co., Ltd. has a production capacity of 150000 wafers per year (30000 wafers per 4-inch and 120000 wafers per 6-inch). Base: Tongling, Anhui 15 Hebei Tianda Jingyang Semiconductor Technology Co., Ltd. Capacity: Expected to have built a production capacity of 28000 pieces per year (including 4-inch and 6-inch) Base: Qinghe 16, Xingtai, Hebei Jiangsu Chaoxinxing Semiconductor Co., Ltd. production capacity: 6-inch substrates have been mass-produced, but production capacity is unknown; Small batch production of 8-inch substrates. Base: Nanjing 17 Capacity of Zhongdian Compound Semiconductor Co., Ltd.: The current production capacity of silicon carbide substrates is 20000 pieces per year (mainly 6-inch), and it is planned to reach 80000 pieces per year for 4-6 inch substrates and epitaxial wafers, as well as silicon carbide based gallium nitride N-type epitaxial wafers by 2025. Base: Ningbo 18 Hefei Century Jinxin Semiconductor Co., Ltd. has a production capacity of 30000 pieces per year for 6-inch substrates, and plans to produce small batches of 8-inch substrates in 2024, with a production capacity of 100000 pieces per year by 2025. Base: Hefei, Baotou, Inner Mongolia (planned 8-inch 700000 pieces per year, suspended) 19 Ningbo Hesheng New Materials Co., Ltd. has a production capacity of 20000 pieces per year for 6-inch silicon carbide substrates and epitaxial wafers; Small batch production of 8-inch substrates, with plans to increase production capacity to 100000 pieces by 2025. Base: Ningbo 20 Beijing Jingzhi Semiconductor Co., Ltd. has a production capacity of 25000 wafers per year by early 2025, with a long-term plan of 270000 wafers per year. Base: Shunyi, Beijing 21 Zhejiang Caizi Technology Co., Ltd. has an annual production capacity of 60000 pieces of 6-inch silicon carbide substrates. After the third phase of the Quzhou base is fully operational, it is expected to achieve an annual production capacity of 600000 pieces of 6-8 inch silicon carbide substrates. Base: Xiaoshan, Hangzhou, Quzhou 22 Shenzhen Guocarbon Semiconductor Technology Co., Ltd. has a production capacity of 240000 silicon carbide substrates under construction per year. Base: Shenzhen, Nansha, Guangzhou (joint venture with Guangzhou Nansha Semiconductor) 23 Zhejiang Bolante Semiconductor Technology Co., Ltd. has a production capacity of 150000 pieces of 6-8 inch silicon carbide substrates per year starting from October 2024; The Danyang base is planned to have an annual production capacity of 250000 pieces, but has not yet been launched. Base: Jinhua, Zhejiang, Danyang, Jiangsu 24 Jiangsu Jixin Advanced Materials Co., Ltd. has a production capacity of 150000 pieces of silicon carbide substrates per year in the first phase. Base: Xuzhou 25 Wuhu Yuqin Semiconductor Technology Co., Ltd. has a production capacity of 30000 6-inch silicon carbide substrates under construction. Base: Wuhu 26 Production capacity of Shenzhen Chongtou Tianke Semiconductor Co., Ltd.: A 6-8 inch silicon carbide substrate production line has been built, with an annual substrate production capacity of 100000 pieces and an annual epitaxial wafer production capacity of 250000 pieces. Base: Bao'an, Shenzhen