Tianyue Advanced is the first in the industry to prepare 8-inch SiC substrates without macroscopic defects using liquid-phase method, and is the first to produce P-type substrates using liquid-phase method, successfully solving the interface control and defect control problems of high-quality crystal growth. The effective thickness of its substrate exceeds 60 millimeters, far higher than the industry average of 20 millimeters, and achieves near zero microtubes, no stacking faults, and low densities of basal dislocations (BPD), screw dislocations (TSD), and edge dislocations (TED); The company also promotes defect free delivery through the 'Z Plan'. Tianke Heda is the world's first 8-inch low resistance substrate, with a resistivity controlled at 7-12 m Ω· cm, only half of conventional N-type substrates, overcoming the industry pain point of high dislocation defect density in low resistivity layers. According to calculations, for every 1 m Ω· cm decrease in resistivity, the on resistance of the device can correspondingly decrease by 2-4%, providing key support for improving the performance of high-end power devices. In terms of crystal structure control and doping uniformity, Nansha wafer successfully grew 8-inch SiC crystals with a single 4H crystal structure by optimizing the temperature and flow field design for large-sized crystal growth. After processing, the 4H crystal structure area ratio of the substrate reached 100%, and achieved near zero screw dislocation density control. The 8-inch substrate of Jingyue Semiconductor performs outstandingly in terms of performance, with a basal plane dislocation density (BPD) of less than 20/cm ² and a total dislocation density (EPD) of less than 1000/cm ². The core parameters reach the international leading level and meet the stringent requirements of high-end power devices for materials. Continuous improvement in process compatibility and cost optimization capabilities: Most leading enterprises have achieved compatibility between 6-inch and 8-inch production capacity. Enterprises such as Tianyue Advanced and Jingsheng Electromechanical have carried out differentiated design for long crystal equipment in advance, which can quickly switch when the demand for 8 inches increases, greatly improving production capacity utilization. Significant achievements have also been made in patent and standard layout: Tianyue Advanced has obtained a total of 197 invention patent authorizations (including 14 overseas), ranking among the top five in the field of silicon carbide substrate patents worldwide; Shuoke Crystal has taken the lead in formulating 4 industry standards and has applied for more than 180 patents, continuously enhancing its technological autonomy and controllability, providing support for the standardized development of the industry.