2024-11-14
Hangzhou Spectral Analysis Photocrystal Applied for SiC VDMOSFET Structure Patent that Can Reduce Pa
On November 11, 2024, the financial sector reported that the China National Intellectual Property Administration information showed that Hangzhou Spectra Photocrystal Semiconductor Technology Co., Ltd. applied for a patent entitled "a SiC VDMOSFET structure capable of reducing parasitic charges", with the publication number of CN 118919564 A and the application date of July 2024.