In the traditional processing flow of SiC substrates, multi wire cutting technology is mainly used. During the cutting process of 6-inch and 8-inch SiC ingots, the loss of a single piece of material can reach up to 280-300 μ m. Taking 6-inch SiC ingots as an example, the cutting time can reach up to 130 hours, and the cutting time for 8-inch SiC ingots can even reach 180 hours, resulting in a material loss rate of nearly 46% for each SiC ingot. This high material loss rate not only increases production costs, but also seriously affects production efficiency.

   In order to solve the problems in traditional cutting processes, the New Technology Research Department of Shenzhen Pinghu Laboratory has successfully developed laser exfoliation technology for SiC substrates. Compared with multi wire cutting technology, laser stripping technology has significant advantages, especially in terms of material loss and production efficiency.

   When using laser ablation technology, the single piece material loss of 6-inch and 8-inch SiC substrates can be controlled within 120 μ m, significantly lower than the traditional cutting process of 280-300 μ m, and the wafer yield has been increased by 40%. In addition, laser peeling technology has reduced the cost of a single piece by about 22%. The implementation of this technology not only significantly reduces production costs, but also improves production efficiency, which helps accelerate the industrialization process of 8-inch SiC substrates.

   The technological breakthrough of Shenzhen Pinghu Laboratory has brought a new model of light assets and high efficiency to the SiC substrate industry. The application of laser ablation technology not only improves the processing efficiency and reduces costs of SiC substrates, but also provides new ideas and methods for the processing of other hard materials. The promotion of this technology is expected to accelerate the industrialization process of SiC and promote progress and development in related fields such as materials science and laser technology.

   Source: Shenzhen Pinghu Laboratory