The companies involved include Sanan Semiconductor, Tianke Heda, Chongtou Tianke, Tianyue Advanced, Jingsheng Electromechanical, Tongguang Co., Ltd., Tony Electronics, Keyou Semiconductor, and so on. Among them, the breakthroughs made by several companies of Hesheng New Materials in various fields such as 8-inch substrates, epitaxy, crystal growth, and equipment are worth paying attention to. In terms of substrates, many foreign manufacturers have signed long-term supply agreements with Chinese companies such as Tianke Heda and Tianyue Advanced. Industry insiders from multiple sectors have stated that Chinese silicon carbide companies, especially in the field of substrate preparation, offer 6-inch and 8-inch products from domestic substrate companies, regardless of product quality Both production capacity and price have obvious competitiveness. It is expected that in the next few years, top domestic substrate companies will become the main suppliers of 8-inch substrates in the international market, with a market share far exceeding the current 6-inch market. This year, China's silicon carbide substrate market has been experiencing frequent dynamics. On September 10th, Ningbo Hesheng New Materials announced that its 8-inch conductive 4H SiC substrate project has been fully connected, and the product has shown excellent performance in key performance indicators such as micro tube density and resistivity; On September 2nd, Tianyue Advanced announced that the company has achieved independent diameter expansion on an 8-inch silicon carbide substrate, completing the rapid layout from 8-inch conductive substrate preparation to industrialization; Recently, Keyou Semiconductor stated that its 8-inch silicon carbide yield rate has reached around 60%, After the 8-inch silicon carbide substrate processing production line is debugged by the end of 2023, it is gradually increasing its production capacity; Century Gold Core stated that the 8-inch silicon carbide substrate has completed multiple batches of product validation with multiple domestic and foreign customers, and is expected to complete orders in the second half of 2024; On April 11th of this year, Qinghe Jingyuan officially announced that, Successfully prepared 8-inch silicon carbide bonded substrates in China. In the field of silicon carbide epitaxy, Tianyu Semiconductor is also increasing its production capacity. It is reported that the first phase of its headquarters and manufacturing center project is about to undergo trial production, with a production capacity of 170000 pieces per year. In addition, recently the official also disclosed Tianyu Semiconductor's 8-inch silicon carbide epitaxial process technology research and industrialization capability enhancement project; In addition, on May 13th, Hikvision Semiconductor announced that the company has successfully achieved homogeneous epitaxial growth on domestically produced 8-inch silicon carbide substrates, officially possessing the ability to mass produce 8-inch SiC epitaxial wafers; Hantiantian Cheng also announced in May this year that the company has completed the technological development of an 8-inch silicon carbide epitaxial process with independent intellectual property rights, Hantiantian Cheng has officially acquired the mass production capability of domestically produced 8-inch silicon carbide epitaxial chips; In April of this year, Nanjing Baishi Electronics announced that it officially has the production capacity of domestically produced 8-inch silicon carbide epitaxial chips In the field of silicon carbide equipment, the 48th Institute of China Electronics Technology Group Corporation recently announced that its independently developed 8-inch silicon carbide epitaxial equipment has achieved key technological breakthroughs by improving laser vision positioning, wafer self correction and other technologies, The automation performance of the equipment has become more mature, which has improved the production efficiency of the product; The first batch of 6&8-inch silicon carbide laser rolling equipment produced by Guangzhou Sanyi Laser has been successfully completed and officially delivered to customers, improving production efficiency and product yield; In August of this year, Nashi Intelligence successfully developed an 8-inch silicon carbide epitaxial device with larger dimensions and more innovative technologies; The first batch of 8-inch silicon carbide crystal growing equipment from Jingsheng Co., Ltd. was delivered in Chongqing in July this year; As early as June last year, Jing Sheng Electromechanical has successfully developed an 8-inch single-chip silicon carbide epitaxial growth equipment with international advanced level; In addition, North Huachuang, a leading semiconductor equipment enterprise in China, has already produced corresponding equipment products for 8-inch substrate and epitaxial manufacturing Overall, China's silicon carbide industry has developed rapidly in recent years, with a continuously expanding market size. Significant progress has been made in upstream silicon carbide substrate preparation technology, continuously narrowing the gap with international advanced levels. However, there is still a significant gap between the midstream device and module manufacturing processes and international large factories.