With the continuous improvement of intelligent, efficient and energy-saving requirements for aerospace equipment, the demand for high-power electronic devices is becoming increasingly urgent. SiC (silicon carbide) semiconductor technology, with its unique advantages, has become a key factor in promoting the upgrading and performance leap of aerospace equipment.

    Many high-temperature structural components and heat-resistant structures in the aerospace industry use SiC composite materials. In the field of electronic components, SiC, with its wide bandgap characteristics, can operate at higher voltages, temperatures, and switching frequencies, demonstrating significant advantages in power conversion and power electronics systems.

    According to TrendForce's latest "2024 Global SiC Power Device Market Analysis Report", SiC materials are accelerating their expansion in key application areas such as automotive and renewable energy, which have extremely high requirements for power density and efficiency. The report predicts that the global demand for SiC power devices will continue to grow, and it is expected that by 2028, the market size will reach 9.17 billion US dollars (approximately 64.8 billion yuan).

     From the overall competitive landscape of the industry, companies from the United States, Europe, and Japan are the leaders in the SiC industry. According to Jibang Consulting, only STMicroelectronics, Anson, Infineon Wolfspeed、 In 2023, the market share of SiC MOSFET device revenue reached 91.9% among the five companies in ROHM, while also creating record revenue.

     Just like Infineon, utilizing its rich experience and relevant professional knowledge, it has launched the revolutionary CoolSiC ™  MOSFET technology, this series of products covers a voltage range of 400V~2000V, with high efficiency, energy-saving characteristics, and optimal reliability, and has three-level fourpack、 Half bridge Different configurations such as Sixpack and current expansion are suitable for applications such as photovoltaic inverters, battery charging, energy storage, motor drives, uninterruptible power supplies (UPS), auxiliary power supplies, and switch mode power supplies (SMPS).

    Similarly, ROHM is also outstanding in the development of SiC power components and modules. ROHM's newly launched 4th generation SiC MOSFET achieves ultra-low on resistance in the industry while improving short-circuit withstand time. In addition, it also has the characteristics of low switching loss and support for 15V gate source voltage, which helps the equipment to further save energy.

     In addition, the TO-263-7L and TO-247-4L packaged products with driver source pins can further stimulate the high-speed switching performance of SiC MOSFETs, which play an important role in host inverters, car chargers, photovoltaic inverters, and xEV charging stations.

     Compared to international manufacturers, China's silicon carbide industry started relatively late and is currently slightly behind the international advanced level. But driven by the demand for terminal applications such as new energy vehicles, photovoltaic energy storage charging, rail transit, and industry, Chinese SiC manufacturers are also accelerating their pace of catching up with international giants.