SiC (silicon carbide) epitaxial equipment is one of the core key equipment for the manufacturing of third-generation semiconductor devices. Compared with traditional silicon-based semiconductors, SiC materials have advantages such as high temperature resistance, high pressure resistance, and high conductivity, and are widely used in fields such as new energy vehicles, 5G communication, aerospace, etc. However, due to high technological barriers and complex equipment, the development and industrialization of SiC epitaxial devices have always been a challenge in the global semiconductor field.

   The 48th Institute of China Electronics Technology Group Corporation (CETC) has taken many years to overcome multiple key technologies and successfully achieved independent research and mass production of SiC epitaxial equipment. The 30 sets of equipment shipped this time have not only achieved large-scale batch delivery for the first time in China, but have also accumulated over a hundred sets of shipments and are operating stably at customer sites. The achievement of this result signifies that China has strong international competitiveness in the field of third-generation semiconductor equipment.

   In addition, CETC 48th Institute also focuses on the intelligent and automated design of equipment, introducing advanced AI algorithms to achieve real-time monitoring and optimized control of equipment operation status. These innovations not only improve the production efficiency of equipment, but also significantly reduce maintenance costs, providing users with higher cost-effectiveness.