As a high-tech enterprise listed on the 2024 Global Unicorn List, Tongguang Corporation has established a national level enterprise technology center, which is the first national level research and development platform qualification recognized by the company since its establishment. It is also the only enterprise in Hebei Province to obtain a national level technology center in the field of silicon carbide.

   According to official sources, Tongguang Corporation's 8-inch silicon carbide single crystal substrate project is expected to have a total investment of 882 million yuan and is scheduled to be fully put into operation by 2027.

    The establishment of this technology center is of great significance for promoting the high-end and large-scale development of the third-generation semiconductor industry chain. Through deep cooperation with institutions such as the Institute of Semiconductors of the Chinese Academy of Sciences, Tongguang Group has broken through international technological barriers, solved the bottleneck problem of silicon carbide single crystal substrates, and achieved independent controllability of key chip materials.

   Zheng Qingchao, Chairman of Tongguang Co., Ltd., stated that in response to the growing demand for high-performance silicon carbide substrates in the market, the company continues to innovate, increase research and development investment, and develop larger sized silicon carbide substrates.

   Public information shows that silicon carbide single crystal, as the core representative of third-generation semiconductor materials, is at the forefront of the silicon carbide industry chain and is the foundation and key to the development of the high-end chip industry. The launch of this project is of great significance for enhancing the self-reliance of core technologies, high-end industrial chains, and large-scale industrial clusters of China's third-generation semiconductors.