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High purity graphite felt
● High mechanical strength ● Good thermal insulation ● Outstanding thermal stability ● High purity, low impurity content ● Excellent seismic and corrosion resistance ● Long service life

Category High purified graphite felt for semiconductor Industriy

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Product Details

At present, we have mastered all the carbon fiber felting technology and have created a unique production method using 

carbon fiber soft felt as raw material to produce solidified felt, which has been formed in one go through 2400 ℃ 

high-temperature graphitization. Hard felt adopts density gradient method structural technology and undergoes various 

surface treatment or purification treatments, resulting in higher strength, better oxidation resistance, and higher porosity. 

All felting equipment, impregnation equipment, curing and forming equipment, carbonization and graphitization 

equipment, and high-temperature chemical purification equipment have been independently developed. Advantages:

● High mechanical strength

● Good thermal insulation

● Outstanding thermal stability

● High purity, low impurity content

● Excellent seismic and corrosion resistance

● Long service life

● Non-shedding and colorfast

Application: Mainly used in high-temperature environments under vacuum or inert gas protection, such as semiconductor 

crystal growth furnaces, photovoltaic monocrystalline/polycrystalline silicon furnaces, fiber preform and drawing furnaces,

 sapphire growth furnaces, high-end metal heat treatment furnaces, etc

High Purity Graphite Felt

Technical Specifications

Technical Indicators

Unit

technical parameters

Volumn Density

g/cm³

0.15-0.30

Average thermal conductivity

1400℃ W/(m·K)

0.25 0.35 

Production Temperature

2200

Thermal expansion coefficient

3000℃

10-6/2.5±0.5

Impurity Parts per million

PPM

≤5PPM 

Resistivity@0.1Mpa

plane direction(5%)

Ω.m

2.0*10-4 3.5*10-4

Externalsurfacetreatment

/

1: Paste graphite thin paper

2: Attach carbon fiber cloth

compressive strength

plane direction(5%)

Mpa

1.8-1.3

Two sided direction

1.79 1.77 1.56 1.56 

bending strength

plane direction5%

Mpa

2.3-1.8 

Two sided direction

1.33 1.2 1.2 1.2 

Carbon Content

%

99.90

Usage environment

air ℃ 

400 400 400 400

ThermalConductivity

W/(m·K)

1400℃

vacuum :0.25 

argon:0.35