Category High purified graphite felt for semiconductor Industriy
Online consultationAt present, we have mastered all the carbon fiber felting technology and have created a unique production method using
carbon fiber soft felt as raw material to produce solidified felt, which has been formed in one go through 2400 ℃
high-temperature graphitization. Hard felt adopts density gradient method structural technology and undergoes various
surface treatment or purification treatments, resulting in higher strength, better oxidation resistance, and higher porosity.
All felting equipment, impregnation equipment, curing and forming equipment, carbonization and graphitization
equipment, and high-temperature chemical purification equipment have been independently developed. Advantages:
● High mechanical strength
● Good thermal insulation
● Outstanding thermal stability
● High purity, low impurity content
● Excellent seismic and corrosion resistance
● Long service life
● Non-shedding and colorfast
Application: Mainly used in high-temperature environments under vacuum or inert gas protection, such as semiconductor
crystal growth furnaces, photovoltaic monocrystalline/polycrystalline silicon furnaces, fiber preform and drawing furnaces,
sapphire growth furnaces, high-end metal heat treatment furnaces, etc
High Purity Graphite Felt Technical Specifications | |||
Technical Indicators | Unit | technical parameters | |
Volumn Density | g/cm³ | 0.15-0.30 | |
Average thermal conductivity | 1400℃ W/(m·K) | 0.25 0.35 | |
Production Temperature | ℃ | 2200 | |
Thermal expansion coefficient | 3000℃ | 10-6/2.5±0.5 | |
Impurity Parts per million | PPM | ≤5PPM | |
Resistivity@0.1Mpa plane direction(5%) | Ω.m | 2.0*10-4 3.5*10-4 | |
Externalsurfacetreatment | / | 1: Paste graphite thin paper 2: Attach carbon fiber cloth | |
compressive strength | plane direction(5%) | Mpa | 1.8-1.3 |
Two sided direction | 1.79 1.77 1.56 1.56 | ||
bending strength | plane direction(5%) | Mpa | 2.3-1.8 |
Two sided direction | 1.33 1.2 1.2 1.2 | ||
Carbon Content | % | 99.90 | |
Usage environment | air ℃ | 400 400 400 400 | |
ThermalConductivity | W/(m·K) | 1400℃ vacuum :0.25 argon:0.35 |