Overview of growth and processing flow of silicon carbide substrate

As a typical representative of third-generation semiconductor materials, silicon carbide is an ideal material for producing high-voltage, high-frequency, and high-power devices due to its performance advantages such as wide bandgap, high thermal conductivity, high breakdown electric field, and high electron migration rate. It can effectively break through the physical limits of traditional silicon-based power semiconductor devices and is known as a green energy material that drives the "new energy revolution". In the production and manufacturing process of power devices, the growth and processing of silicon carbide single crystal substrates are key links that determine performance and yield. Below is a brief overview of their growth and processing processes:

Global energy storage battery market: multi regional opportunities and challenges under high-speed g

According to the Global Flow Battery Network, in the context of energy transition, the global energy storage battery market is showing an unprecedented high-speed growth trend. It is predicted that the global demand for energy storage batteries will be between 500-550GWh by 2025, with a year-on-year increase of 35% to 700GWh in 2026. By 2030, this number will soar to 1500GWh. The potential of the domestic market should not be underestimated. According to the plan, the domestic photovoltaic stock target for 2030 is 2000GW. If calculated based on a 25% power ratio and a 4-hour distribution and storage time, the corresponding energy storage demand is as high as 2000GWh, with an average annual demand of nearly 400GWh. However, the installed capacity in 2025 is only 150GWh, which means that there is significant growth potential in the domestic energy storage market in the coming years. In overseas markets, Europe and emerging markets maintain a high growth rate of 50% -100%, while the US market is facing some policy disruptions. From a price perspective, the tight supply and demand situation has driven up the price of battery cells, and the industry's prosperity continues to rise. The profits of top companies are expected to be further improved. Core targets such as CATL and Sunac, with reasonable valuations and catalysts, have attracted market attention.

Domestic silicon carbide semiconductors are on the rise comprehensively

Recently, Wolfspeed、 Leading domestic and foreign SiC (silicon carbide) semiconductor companies such as Infineon, ON Semiconductor, Tianyue Advanced, and Sanan Optoelectronics have successively released their semi annual or quarterly reports for 2025. Data shows that domestic enterprises are rapidly rising with the help of SiC, while international giants are facing challenges due to slow transformation. This market change triggered by technological innovation not only reshapes the competitive landscape of the industry, but also brings new development opportunities for related industrial chains