2025-11-27
Starting from the bottom, multiple Chinese SiC large-size substrates with 8-inch production capacity
Against the backdrop of accelerated development in the global silicon carbide (SiC) semiconductor material industry, Chinese domestic enterprises have formed large-scale production capabilities in the 8-inch SiC substrate field, with continuous technological breakthroughs and expanding application scenarios. At the same time, 12 inch technology research and development has also achieved phased results, laying a foundation for the long-term development of the industry. This article will analyze in detail the development status, trends, and prospects of 8-inch SiC substrates.